Synthesis and Characterization of Ferroelectric (1-x)SrBi2Ta2O9-xBi3TaTiO9 Thin Films for Non-volatile Memory Applications
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Laser Annealing of MOCVD Deposited Ferroelectric SrBi 2 Ta 2 O 9 , Pb ( ZrXTi 1 - X ) O 3 and CeMnO 3 Thin Films
Excimer laser annealing studies were conducted of SrBi2Ta2O9, Pb(ZrxTi1-x)O3 and CeMnO3 thin films. The main incentive was to develop a low temperature process for SrBi2Ta2O9 thin films, which typically require a 750 C anneal to crystallize and achieve optimum ferroelectric properties. The results show that room temperature laser annealing can crystallize SrBi2Ta2O9, with a strong (200) preferr...
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تاریخ انتشار 1999